IRF250 PDF

IRF 30A, V, Ohm, N-Channel. Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is designed, tested. IRF Transistor Datasheet, IRF Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. The IRF is a V single N-channel HEXFET® MOSFET hermetically sealed with extremely low on-resistance with high transconductance, superior reverse.

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Irf250 – IRF 250 Transistor MOSFET

Maximum Drain Source Resistance. By selecting your country, you will have a much more streamlined shopping experience Taiwan Chinese Other Countries.

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Number of Elements per Chip. Save this item to a new parts list. Typical Input Capacitance Vds. Kuwait Lebanon Oman Qatar.

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Typical Turn-On Delay Time. The product does not contain any of the restricted substances in concentrations and applications banned by the Directive, and for components, the product is capable of being worked on at the higher temperatures required by lead—free soldering. Maximum Drain Source Voltage. Maximum Gate Threshold Voltage.

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Maximum Continuous Drain Current. Thank you for your feedback. Typical Turn-Off Delay Time.